| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
This Renesas RMLV0416EGSB-4S2#HA1 is a volatile SRAM memory integrated circuit with a capacity of 4Mbit. It utilizes a parallel interface for data access, offering an access time of 45 ns and a write cycle time of 45 ns. The memory organization is 256K x 16.
The device is designed for surface mounting and comes in a 44-TSOP II package, measuring 0.400 inches with a width of 10.16mm. It operates within a temperature range of -40°C to 85°C (TA) and requires an operating voltage between 2.7V and 3.6V.
This SRAM is suitable for applications requiring fast data storage and retrieval. Its specifications make it a viable option for various embedded systems and electronic designs where memory performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4Mbit.
256K x 16.
2.7V to 3.6V.
45 ns.
-40°C to 85°C.
44-TSOP II (0.400", 10.16mm width).