| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Renesas RMLV0416EGSB-4S2#AA1 is a 4Mbit parallel SRAM memory IC. It utilizes volatile memory technology, meaning data is retained only while power is applied. The SRAM (Static Random Access Memory) format provides fast access times, making it suitable for cache and buffer applications in embedded systems.
The device features a parallel interface for efficient data transfer and is housed in a 44-lead TSOP II package, which is designed for surface mount assembly. This package is commonly used for memory ICs in space-constrained designs.
This memory IC is ideal for applications requiring temporary data storage with high-speed read and write capabilities. Typical uses include data buffering in networking equipment, cache memory in processors, and temporary storage in industrial control systems. The 4Mbit capacity offers a balance between storage size and footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Volatile.
SRAM.