| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The RM555T is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by RAYT. This component is categorized under discrete semiconductor products, specifically within the single IGBT transistors subcategory.
Key compliance and environmental attributes include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for general handling and assembly processes without special precautions.
Detailed electrical and mechanical specifications, such as operating voltage, current handling capabilities, and package details, are not provided in the available data and would typically be found in the manufacturer's datasheet. This part is intended for use in various electronic switching and amplification applications where IGBT technology is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RM555T transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RM555T is 1 Unlimited.
The RM555T is REACH Unaffected.