| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Current | |
| Storage Temperature |
The Renesas RKZ27TWAQEH1 is a silicon epitaxial planar Zener diode featuring bidirectional surge absorption capabilities. This device is designed to suppress surges in both forward and reverse directions, making it effective against positive and negative surges.
Key electrical characteristics include a Zener voltage ranging from 26.2V to 31.5V at 1mA, a maximum reverse current of 0.1μA at 24V, and a capacitance of 30pF at 1MHz. A significant feature is its high ESD resistance, guaranteeing 30 kV and complying with the IEC 61000-4-2 standard.
This diode is particularly suitable for protecting CAN-BUS lines and supports automotive specifications. It comes in a CMPAK package, which is designed for high-density surface mounting and high-speed assembly processes. The absolute maximum ratings include a power dissipation of 200mW, a junction temperature of 150°C, and a storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Zener voltage of the RKZ27TWAQEH1 is 26.2 V at a test current of 1 mA.
The capacitance of the RKZ27TWAQEH1 is 30 pF at 1 MHz.
The maximum junction temperature is 150°C.
It uses a CMPAK surface-mount package.
Yes, it is RoHS3 compliant.