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12,100 pcs
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12100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas RKZ27TWAQE#H1 is a silicon epitaxial planar Zener diode designed for bidirectional surge absorption. This component features two lines with bidirectional characteristics in a single package, effectively suppressing surges in both forward and reverse directions. It boasts a high ESD resistance, guaranteed to 30 kV and compliant with the IEC 61000-4-2 standard.
Key electrical characteristics include a Zener voltage ranging from 26.2V to 31.5V at 1 mA. The diode also exhibits a low reverse current of 0.1 μA at 24V and a capacitance of 30 pF at 0V and 1 MHz. The device is rated for a maximum power dissipation of 200 mW and operates within a junction temperature range of -55°C to 150°C.
Packaged in a CMPAK (PTSP0003ZB-A) surface-mount package, this diode is suitable for high-density surface mounting and high-speed assembly processes. Its design makes it particularly suitable for protecting CAN-BUS lines and supporting automotive specifications.
This Zener diode is designed for applications requiring robust surge protection and high ESD immunity. Its bidirectional capability and compact package make it a versatile component for automotive and industrial electronics where space and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Zener voltage is between 26.2 V and 31.5 V when tested at 1 mA with a 40 ms pulse.
The maximum reverse current is 0.1 μA at a reverse voltage of 24 V.
The capacitance is a maximum of 30 pF at 0 V and 1 MHz.
The ESD capability is 30 kV, tested with 150 pF, 330 Ω, and 10 pulses in both forward and reverse directions.
The maximum power dissipation is 200 mW.
The junction temperature is rated up to 150 °C, and the storage temperature range is -55 °C to +150 °C.
It is supplied in a CMPAK surface-mount package.