| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
86,971 pcs
|
86971 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RJU002N06T106 is a silicon N-channel MOSFET designed for switching applications. It offers low on-resistance and low voltage drive capability, supporting 2.5V drive.
Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 200mA at 25°C, and a maximum power dissipation of 200mW. The gate threshold voltage is a maximum of 1.5V at 1mA, and the static drain-source on-state resistance is a maximum of 2.3 Ohms at 200mA and 4.5V gate-source voltage. Input capacitance is rated at 18pF maximum at 10V.
This MOSFET is housed in a UMT3 package, which corresponds to SC-70 and SOT-323 surface mount footprints. The operating temperature range is from -55°C to +150°C, with a channel temperature maximum of 150°C.
Features such as low on-resistance and low voltage drive make this component suitable for various switching circuits. The surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The maximum continuous drain current is 200mA at 25°C.
The operating temperature range is -55°C to +150°C.
The RJU002N06T106 is available in a UMT3 package, which corresponds to SC-70 and SOT-323 footprints.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.