RJU002N06T106 The ROHM Semiconductor RJU002N06T106 is an N-Channel MOSFET with a 60V drain-source voltage and 200mA current rating. It features a low on-resistance and 2.5V drive capability.
Mfr Part #:

RJU002N06T106

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RJU002N06T106 is an N-Channel MOSFET with a 60V drain-source voltage and 200mA current rating. It features a low on-resistance and 2.5V drive capability.
✓ Total Stock: 86,971 pcs
$ Price Range: $2.27

RJU002N06T106 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
86,971 pcs
86971 pcs On Request 1 On Request On Request 17+ On Request On Request

RJU002N06T106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Voltage
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

RJU002N06T106 Description

Short technical summary and product information.

The ROHM Semiconductor RJU002N06T106 is a silicon N-channel MOSFET designed for switching applications. It offers low on-resistance and low voltage drive capability, supporting 2.5V drive.

 

Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 200mA at 25°C, and a maximum power dissipation of 200mW. The gate threshold voltage is a maximum of 1.5V at 1mA, and the static drain-source on-state resistance is a maximum of 2.3 Ohms at 200mA and 4.5V gate-source voltage. Input capacitance is rated at 18pF maximum at 10V.

 

This MOSFET is housed in a UMT3 package, which corresponds to SC-70 and SOT-323 surface mount footprints. The operating temperature range is from -55°C to +150°C, with a channel temperature maximum of 150°C.

 

Features such as low on-resistance and low voltage drive make this component suitable for various switching circuits. The surface mount package facilitates integration into compact electronic designs.

RJU002N06T106 Quick Information

Product Type: MOSFET
Canonical Name: RJU002N06T106 N-Channel MOSFET
Subcategory: N-Channel

RJU002N06T106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RJU002N06T106 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RJU002N06T106 Features

  • N-Channel MOSFET for switching.
  • 60V drain-source voltage rating.
  • 200mA continuous current capability.
  • Low on-resistance and 2.5V drive.
  • Surface mount UMT3 package.

RJU002N06T106 Applications

  • Used in switching power supplies
  • Suitable for low-voltage amplification
  • Ideal for portable electronic devices
  • Applied in load switching circuits

RJU002N06T106 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the RJU002N06T106?

The drain-source voltage is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 200mA at 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the RJU002N06T106?

The RJU002N06T106 is available in a UMT3 package, which corresponds to SC-70 and SOT-323 footprints.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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