| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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217 pcs
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217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Renesas RJP6065DPP is a single MOSFET transistor belonging to the Transistors - FETs, MOSFETs - Single category. This component is housed in a TO-220F package, making it suitable for through-hole mounting.
Key electrical characteristics include a typical collector to emitter saturation voltage (Vce(sat)) of 1.8 V when operating at 40 A collector current and 15 V gate-emitter voltage at 25°C. The device also boasts a gate to emitter voltage rating of ±30 V, providing a good margin for control signals.
This MOSFET is designed with Pb-free lead plating and chip bonding, indicating a focus on environmental considerations during manufacturing. Its RoHS3 compliance and MSL 1 rating suggest suitability for a wide range of industrial and commercial applications where reliability and adherence to environmental standards are important.
The TO-220F package is a standard for power semiconductor devices, offering good thermal dissipation and ease of mounting onto heat sinks. This makes the RJP6065DPP a practical choice for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical collector to emitter saturation voltage (Vce(sat)) is 1.8 V under the conditions of IC= 40 A, VGE= 15V, and Ta = 25°C.
The gate to emitter voltage rating is ±30 V.
The RJP6065DPP is available in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.