| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,609 pcs
|
78609 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The Renesas RJP4009ANS-01#Q6 is a single Insulated Gate Bipolar Transistor (IGBT) with a 400V voltage rating. It is designed for surface mount installation within an 8-VDFN package, specifically utilizing the 8-VSON (3x4.4) supplier device package.
This IGBT features a continuous current rating of 150A and a power dissipation of 1.8W. The saturation voltage (Vce(on)) is a maximum of 9V at 2.5V gate-emitter voltage and 150A collector current. It operates within a temperature range of -40°C to 150°C (TJ).
The input type is standard, making it suitable for various power switching applications. Its robust construction and specifications position it for use in demanding electronic circuits requiring high voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RJP4009ANS-01#Q6 has a voltage rating of 400V.
This IGBT can handle a continuous current of 150A.
The power dissipation for this component is 1.8W.
The operating temperature range is -40°C to 150°C.
It is supplied in an 8-VDFN package.
The RJP4009ANS-01#Q6 is a surface mount device.