| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating | |
| Transistor Type | |
| Voltage Rating |
The Renesas RJP4005ANS-01 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a robust voltage rating of 400V and a high current handling capability of 150A, making it suitable for demanding electronic circuits.
This IGBT is supplied in Bulk packaging, which is a common method for high-volume distribution. The component's specifications indicate its suitability for applications requiring efficient power control and switching.
Key electrical characteristics include its N-channel configuration, 400V breakdown voltage, and 150A continuous collector current. These parameters are critical for designers selecting components for power supplies, motor drives, and other high-power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RJP4005ANS-01 has a voltage rating of 400V.
The RJP4005ANS-01 has a current rating of 150A.
The RJP4005ANS-01 is an N-Channel IGBT.
The RJP4005ANS-01 is supplied in Bulk packaging.