| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas RJP30H2A is a Silicon N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas. This component is designed for power switching applications.
Key compliance features include RoHS3 compliance, indicating adherence to environmental standards for hazardous substances. It also has a Moisture Sensitivity Level (MSL) of 1 Unlimited, meaning it requires no special handling regarding moisture absorption. The REACH status is unaffected, suggesting compliance with regulations concerning chemical substances.
While specific electrical and thermal characteristics such as collector-emitter voltage, collector current, and operating temperature are not detailed in the provided data, the RJP30H2A is part of the IGBT family, typically used in high-power applications. Further details would be available in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RJP30H2A is RoHS3 Compliant.
The MSL for the RJP30H2A is 1 Unlimited.
The RJP30H2A is REACH Unaffected.