| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,438 pcs
|
3438 pcs | On Request | 1 | On Request | On Request | 1127+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas RJP30E4DPE is a single Insulated Gate Bipolar Transistor (IGBT) suitable for various specialized applications. This component is manufactured by Renesas and comes in a Bulk package.
Key specifications include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for general electronic assembly processes. The REACH status is noted as unaffected.
As an IGBT, this device combines the high input impedance of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. This makes it efficient for power switching applications where high voltage and current handling are required.
Further details regarding specific electrical characteristics, operating conditions, and thermal performance should be obtained from the manufacturer's datasheet. The Bulk packaging suggests it is intended for industrial or high-volume manufacturing environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RJP30E4DPE is RoHS3 Compliant.
The MSL for the RJP30E4DPE is Level 1.
The REACH status is Unaffected.
The RJP30E4DPE comes in a Bulk package.