| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,978 pcs
|
2978 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RJP020N06T100 from ROHM Semiconductor is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 60V. It is designed for surface mount applications and comes in a TO-243AA package, also known as MPT3.
This MOSFET features a maximum continuous current rating of 2A (Ta) and a maximum on-resistance (Rds On) of 240mOhm at 2A and 4.5V Vgs. The gate charge (Qg) is 10nC at 4V Vgs, and the input capacitance (Ciss) is 160pF at 10V Vds. The gate-source voltage (Vgs) maximum is ±12V, with a threshold voltage (Vgs(th)) of 1.5V at 1mA.
With a maximum power dissipation of 500mW (Ta) and an operating temperature range up to 150°C (TJ), the RJP020N06T100 is suitable for various electronic circuits requiring efficient switching. The drive voltage ranges from 2.5V to 4.5V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60 V.
The maximum continuous current is 2A (Ta).
The maximum on-resistance (Rds On) is 240mOhm at 2A and 4.5V Vgs.
The operating temperature range is up to 150°C (TJ).
It is available in a TO-243AA package.
It is a surface mount device.