| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
This Renesas RJK0451DPB-00#J5 is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and can handle a continuous current of 35A at ambient temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 7mOhm maximum when measured at 17.5A drain current and 10V gate-source voltage. Its gate charge (Qg) is 14nC maximum at 4.5V, and input capacitance (Ciss) is 2010pF at 10V.
With a maximum power dissipation of 45W (at case temperature) and an operating temperature range up to 150°C, this component is suitable for demanding environments. It is packaged in an LFPAK, identified as SC-100 or SOT-669, and is designed for surface mounting.
The device operates with a maximum gate-source voltage (Vgs) of ±20V and requires drive voltages between 4.5V and 10V for optimal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The MOSFET has a continuous current rating of 35A.
The maximum Rds On is 7mOhm at 17.5A drain current and 10V gate-source voltage.
The operating temperature range is up to 150°C.
It is in an LFPAK package, also referred to as SC-100 or SOT-669.
This component is designed for surface mounting.