| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,080 pcs
|
7080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology |
This N-Channel MOSFET from Renesas, part number RJK03B9DPA-00#J53, offers a 30V drain-to-source voltage (Vdss) and a maximum continuous drain current of 30A. The device features a low on-resistance of 10.6mOhm at 15A and 10V Vgs, and a maximum power dissipation of 25W (Tc).
Operating at temperatures up to 150°C (TJ), this MOSFET is suitable for demanding applications. It utilizes MOSFET (Metal Oxide) technology and comes in an 8-WPAK package for surface mounting. The input capacitance (Ciss) is 1110 pF at 10V Vds, and the gate charge (Qg) is 7.4 nC at 4.5V Vgs.
Compliance information indicates RoHS3 compliance and an MSL of 1. The REACH status is unaffected. This component is ideal for power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The continuous drain current is rated at 30A (Ta).
The maximum on-resistance is 10.6 mOhm when measured at 15A drain current and 10V gate-source voltage.
The maximum operating junction temperature (TJ) is 150°C.
This MOSFET is supplied in an 8-WPAK package.
The mounting type is Surface Mount.