| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,667 pcs
|
150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology |
This N-Channel MOSFET from Renesas, part number RJK0364DPA-00#J0, is designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous current of 35A at ambient temperature.
The MOSFET exhibits a maximum on-resistance (Rds On) of 7.8mOhm when tested at 17.5A and 10V Vgs. Its gate charge (Qg) is a maximum of 10 nC at 4.5V Vgs, and input capacitance (Ciss) is 1600 pF at 10V Vds. The device is rated for a maximum power dissipation of 35W at case temperature and operates within a junction temperature range of -55°C to 150°C.
Packaged in an 8-PowerWDFN (8-WPAK) configuration, this MOSFET is designed for surface mounting. Its RoHS3 compliance and Moisture Sensitivity Level 1 rating indicate suitability for various manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The MOSFET has a continuous current rating of 35A at ambient temperature.
The maximum on-resistance is 7.8mOhm, measured at 17.5A and 10V Vgs.
The operating temperature range is up to 150°C (TJ).
It is supplied in an 8-PowerWDFN package for surface mounting.