SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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104 pcs
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104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas Electronics RJH60F7 is a high-speed power switching IGBT designed for demanding applications. It features a 600V collector-emitter voltage and a 90A collector current, making it suitable for high-power circuits.
Key electrical characteristics include a low collector-to-emitter saturation voltage (VCEsat) of 1.35V typical at 50A and 15V gate voltage. The device also includes a built-in fast recovery diode, simplifying circuit design and improving performance.
Available in TO-3P and TO-247A packages, the RJH60F7 offers flexibility for different mounting requirements. Its power dissipation rating of 328.9W allows for efficient operation in high-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage of the RJH60F7 is 600V.
The maximum collector current for the RJH60F7 is 90A.
The typical collector-to-emitter saturation voltage is 1.35V at IC = 50 A, VGE = 15 V, Ta = 25°C.
The power dissipation of the RJH60F7 is 328.9W.
The RJH60F7 is available in TO-3P and TO-247A packages.
