RJH60D7BDPQ-E0#T2 The Renesas RJH60D7BDPQ-E0#T2 is a 600V, 90A IGBT transistor with 300W power dissipation. It features a Trench IGBT type and is housed in a TO-247-3 package.
Mfr Part #:

RJH60D7BDPQ-E0#T2

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas RJH60D7BDPQ-E0#T2 is a 600V, 90A IGBT transistor with 300W power dissipation. It features a Trench IGBT type and is housed in a TO-247-3 package.
✓ Total Stock: 8,420 pcs
$ Price Range: $1.69

RJH60D7BDPQ-E0#T2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,420 pcs
8420 pcs On Request 1 On Request On Request 16+ On Request On Request

RJH60D7BDPQ-E0#T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

RJH60D7BDPQ-E0#T2 Description

Short technical summary and product information.

The Renesas RJH60D7BDPQ-E0#T2 is a single IGBT transistor designed for power applications. It operates at a voltage rating of 600V and can handle a continuous current of 90A, with a power dissipation of 300W.

 

Key electrical characteristics include a Vce(on) of 2.2V at 15V/50A, a gate charge of 125 nC, and switching energies of 700µJ (on) and 1.4mJ (off). The turn-on delay is 60ns and turn-off delay is 180ns, tested under specific conditions (300V, 50A, 5Ohm, 15V). It also features a reverse recovery time of 25 ns.

 

This IGBT transistor utilizes a Trench IGBT type and has a standard input type. It is designed for through-hole mounting and comes in a TO-247-3 package, also referred to as TO-247.

 

The operating temperature range for this component is up to 150°C (TJ). It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

RJH60D7BDPQ-E0#T2 Quick Information

Product Type: IGBT Transistor
Canonical Name: Renesas RJH60D7BDPQ-E0#T2 IGBT Transistor
Subcategory: IGBT Transistors

RJH60D7BDPQ-E0#T2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RJH60D7BDPQ-E0#T2 Estimated Pricing

Qty Low High
1+ $1.69 $1.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

RJH60D7BDPQ-E0#T2 Features

  • 600V voltage rating for high power applications.
  • 90A continuous current handling capability.
  • 300W power dissipation capacity.
  • TO-247-3 package with through-hole mounting.
  • RoHS3 compliant for environmental standards.

RJH60D7BDPQ-E0#T2 Applications

  • Suitable for power supply circuits.
  • Used in motor control systems.
  • Ideal for industrial automation.
  • Applicable in renewable energy systems.

RJH60D7BDPQ-E0#T2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the voltage rating of the RJH60D7BDPQ-E0#T2 IGBT transistor?

The voltage rating is 600 V.

What is the continuous current rating for this IGBT?

The continuous current rating is 90 A.

What is the power dissipation of the RJH60D7BDPQ-E0#T2?

The power dissipation is 300 W.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What package type is the RJH60D7BDPQ-E0#T2 supplied in?

It is supplied in a TO-247-3 package.

How is the RJH60D7BDPQ-E0#T2 mounted?

It is mounted using the through-hole method.

Is the RJH60D7BDPQ-E0#T2 RoHS compliant?

Yes, it is RoHS3 Compliant.

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