| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,075 pcs
|
2075 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The Renesas RJH1CV7DPK-00#T0 is a single IGBT designed for power applications. It features a high collector-emitter breakdown voltage of 1200V and can handle a maximum collector current of 70A, with a maximum power dissipation of 320W.
This IGBT utilizes Trench technology for efficient switching. Key electrical characteristics include a typical saturation voltage of 2.3V at 15V gate voltage and 35A collector current, a gate charge of 166 nC, and a typical turn-on delay of 53ns and turn-off delay of 185ns at 25°C. The reverse recovery time is specified at 200 ns, and switching energy is 3.2mJ (on) and 2.5mJ (off).
Packaged in a Through Hole TO-3P configuration, the RJH1CV7DPK-00#T0 is suitable for various power electronics designs. It operates at a maximum junction temperature of 150°C. The component is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 1200V.
The RJH1CV7DPK-00#T0 is supplied in a TO-3P package.
The operating temperature is 150°C (TJ).
The RoHS status is RoHS3 Compliant.
The maximum collector current is 70A.
The switching energy is 3.2mJ on and 2.5mJ off.