| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,125 pcs
|
8125 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The ROHM Semiconductor RHU002N06 is a silicon N-channel MOSFET transistor. It is designed for various switching applications, offering features such as low on-resistance, high ESD protection, and high-speed switching.
This MOSFET operates with a low-voltage drive of 4V, simplifying drive circuits and allowing for easy parallel use. The absolute maximum ratings include a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 200mA. Pulsed drain current (I_DP) can reach up to 800mA.
The RHU002N06 is supplied in a T106 taping package, with a basic ordering unit of 3000 pieces. Its thermal resistance from channel to ambient is 625 °C/W. The device is suitable for applications requiring efficient and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V_DSS) for the RHU002N06 is 60V.
The continuous drain current (I_D) for the RHU002N06 is 200mA.
The RHU002N06 is supplied in a T106 taping package.
The storage temperature range for the RHU002N06 is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.