| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
3,489 pcs
|
3489 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RHP020N06T100 from ROHM Semiconductor is a single N-Channel MOSFET. It is designed for surface mount applications and comes in a TO-243AA package, utilizing the MPT3 supplier device package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Ta) of 2A. The on-resistance (Rds On) is a maximum of 200mOhm at 2A and 10Vgs. Gate charge (Qg) is 14nC at 10Vgs, and input capacitance (Ciss) is 140pF at 10Vds. The gate-to-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA.
This MOSFET operates at a maximum junction temperature of 150°C. Its power dissipation is rated at 500mW (Ta). The technology used is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. However, these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
It is packaged in a TO-243AA case with surface mounting type.
The maximum operating temperature is 150°C.
Yes, it is RoHS3 compliant.