| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1333+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RHK003N06T146 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 300mA at 25°C.
Key electrical characteristics include a maximum on-state resistance of 1 Ohm at 300mA and 10V gate-source voltage, and a gate threshold voltage of 2.5V maximum at 1mA. The input capacitance is rated at a maximum of 33pF at 10V, with a gate charge of 6nC maximum at 10V.
This MOSFET operates within a channel temperature range of -55°C to +150°C. It is housed in a compact SMT3 package, suitable for surface mounting.
The device offers a 4V drive capability, low on-resistance, and features an ESD protection diode and a body diode. Its typical switching times include a turn-on delay of 6ns, rise time of 5ns, turn-off delay of 13ns, and fall time of 5ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 300mA at 25°C.
The maximum Rds On is 1 Ohm at 300mA drain current and 10V gate-source voltage.
The channel temperature range is -55°C to +150°C.
It is supplied in the SMT3 package for surface mounting.