| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
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| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
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| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
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The ROHM Semiconductor RGS80TSX2DHRC11 is a high-performance IGBT transistor featuring Trench Field Stop technology. It offers a robust 1200V voltage rating and a significant 80A current capacity, suitable for demanding power applications. The device dissipates up to 555W of power and operates within a wide temperature range of -40°C to 175°C.
Designed for ease of integration, the RGS80TSX2DHRC11 utilizes a TO-247-3 package and supports through-hole mounting. Key electrical characteristics include a low Vce(on) of 2.1V at 15V/40A, low switching energies of 3mJ (on) and 3.1mJ (off), and a gate charge of 104 nC. The typical turn-on delay (Td(on)) is 49ns, and the reverse recovery time (trr) is 198ns.
This IGBT is suitable for various power conversion and control applications where high voltage and current handling are required. Its specifications make it a reliable component for industrial power supplies, motor drives, and other high-power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the RGS80TSX2DHRC11 is 175°C (TJ).
The RGS80TSX2DHRC11 IGBT has a voltage rating of 1200V.
The continuous current rating for the RGS80TSX2DHRC11 is 80A.
The RGS80TSX2DHRC11 is a Trench Field Stop IGBT.
The RGS80TSX2DHRC11 is mounted using the Through Hole method.