RFP50N06 The RFP50N06 is an N-Channel MOSFET from Harris Semiconductor with a 60V drain-source voltage and 50A continuous drain current. It is supplied in a TO-220-3 package.
Mfr Part #:

RFP50N06

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
The RFP50N06 is an N-Channel MOSFET from Harris Semiconductor with a 60V drain-source voltage and 50A continuous drain current. It is supplied in a TO-220-3 package.
✓ Total Stock: 4,000 pcs
$ Price Range: $2.27

RFP50N06 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

RFP50N06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFP50N06 Description

Short technical summary and product information.

The RFP50N06 is an N-Channel power MOSFET manufactured by Harris Semiconductor. It is designed for applications requiring efficient power switching. This device features a maximum drain-to-source voltage of 60V and a continuous drain current rating of 50A.

 

The MOSFET exhibits a low on-resistance of 22mOhm at 50A and 10V gate drive voltage, contributing to reduced power loss during operation. The gate-to-source threshold voltage is a maximum of 4V at 250µA, and the maximum gate-to-source voltage is ±20V. Input capacitance is rated at 2020pF at 25V.

 

With a maximum power dissipation of 131W (Tc), the RFP50N06 is suitable for various power management tasks. It operates across a wide temperature range from -55°C to 175°C (TJ). The component is housed in a standard TO-220-3 package, facilitating through-hole mounting.

 

Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. These characteristics make the RFP50N06 a robust choice for power electronics designs.

RFP50N06 Quick Information

Product Type: MOSFET
Series: RFP50N06
Canonical Name: RFP50N06 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

RFP50N06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFP50N06 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFP50N06 Features

  • 60V drain-to-source voltage rating.
  • 50A continuous drain current capability.
  • Low 22mOhm on-resistance.
  • Wide -55°C to 175°C operating temperature.
  • TO-220-3 package for through-hole mounting.

RFP50N06 Applications

  • Ideal for power switching circuits.
  • Suitable for motor driver applications.
  • Used in switching regulators.
  • Applicable for relay driver circuits.

RFP50N06 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the RFP50N06?

The drain-to-source voltage (Vdss) of the RFP50N06 is 60V.

What is the continuous drain current for the RFP50N06?

The continuous drain current (Id) for the RFP50N06 is 50A.

What is the on-resistance of the RFP50N06?

The Rds On (Max) at 50A and 10V is 22mOhm.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range (TJ) is -55°C to 175°C.

How is the RFP50N06 mounted?

The RFP50N06 is mounted using the through-hole method.

What package type is the RFP50N06 in?

The RFP50N06 is supplied in a TO-220-3 package.

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