| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Tape & Reel |
The RFP50N05 from Harris is an N-Channel Power MOSFET manufactured using the MegaFET process, providing optimized silicon utilization for outstanding performance. This device is rated for 50A continuous drain current and 50V drain-to-source voltage.
Key electrical specifications include a typical drain-source on-resistance (RDS(ON)) of 0.022 Ohms and a maximum power dissipation of 132W at 25°C. The operating temperature range is from -55°C to 175°C.
Designed for applications such as switching regulators, converters, and motor drivers, the RFP50N05 is housed in a TO-220AB package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 50V.
The continuous drain current is 50A.
The typical drain-source on-resistance is 0.022 Ohms.
The operating temperature range is -55°C to 175°C.
The RFP50N05 is available in a TO-220AB package.