| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
308 pcs
|
308 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
103 pcs
|
103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFP50N05 is an N-Channel Power MOSFET manufactured by Harris Semiconductor using the MegaFET process. This device is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers.
Key electrical specifications include a drain-to-source voltage (Vdss) of 50V, a continuous drain current (Id) of 50A at 25°C, and a maximum power dissipation (Pd) of 132W. The on-resistance (Rds On) is a low 22mOhm at 50A and 10V gate-source voltage, indicating efficient power handling.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TO-220-3 package, suitable for through-hole mounting.
Designed for high performance, the RFP50N05 offers optimal silicon utilization for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 50V.
The continuous drain current is 50A at 25°C.
The maximum power dissipation is 132W.
The operating temperature range is -55°C to 175°C.
The RFP50N05 is available in a TO-220-3 package.