| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,358 pcs
|
6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The RFP4N100 from ON Semiconductor is an N-Channel enhancement mode silicon gate power MOSFET. It is rated for a high drain-to-source breakdown voltage of 1000V and can handle a continuous drain current of 4.3A at 25°C.
This MOSFET features a low on-resistance (Rds On) of 3.5 Ohm at 2.5A and 10V gate-source voltage, along with a gate charge of 120 nC at 20V. The device operates within a temperature range of -55°C to 150°C.
Designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers, the RFP4N100 is suitable for circuits requiring high speed and low gate drive power. It can be operated directly from an integrated circuit.
The component is housed in a through-hole TO-220-3 package, facilitating easy integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the RFP4N100 is 1000V.
The RFP4N100 has a continuous drain current rating of 4.3A at 25°C.
The Rds On for the RFP4N100 is a maximum of 3.5 Ohm when tested at 2.5A drain current and 10V gate-source voltage.
The operating temperature range for the RFP4N100 is -55°C to 150°C.
The RFP4N100 is supplied in a TO-220-3 package.