| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The RFP45N06 is an N-Channel, enhancement-mode power MOSFET designed for applications such as switching regulators, converters, and motor drivers. It offers a drain-source voltage of 60V and a continuous drain current of 45A.
Key electrical characteristics include a low on-resistance (Rds(on)) of 0.028 Ohms. The device operates over a wide temperature range from -55°C to +175°C.
Available packages for the RFP45N06 include TO-247, TO-220AB, TO-262AA, and TO-263AB. These packages support various mounting types, including through-hole and surface mount.
This power MOSFET is manufactured using the MegaFET process, optimizing silicon utilization for outstanding performance. It is suitable for direct operation from integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the RFP45N06 is 60V.
The continuous drain current (Id) for the RFP45N06 is 45A.
The typical Rds(on) for the RFP45N06 is 0.028 Ohms.
The RFP45N06 operates from -55°C to +175°C.
The RFP45N06 is available in TO-247, TO-220AB, TO-262AA, and TO-263AB packages.