| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The RFP30P06 is a P-Channel Power MOSFET manufactured by On Semiconductor using the MegaFET process. This device is rated for 60V drain-to-source voltage and can handle a continuous drain current of 30A. It features a low on-resistance of 65mOhm at 30A and 10V Vgs.
Designed for applications such as switching regulators, converters, and motor drivers, the RFP30P06 is suitable for direct operation from integrated circuits. It operates within a temperature range of -55°C to 175°C.
The MOSFET is housed in a TO-220-3 package and utilizes through-hole mounting. Its key electrical characteristics include an input capacitance of 3200 pF and a gate charge of 170 nC.
This component is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating (Vdss) for the RFP30P06 is 60V.
The RFP30P06 has a continuous drain current rating of 30A.
The on-resistance (Rds On) for the RFP30P06 is a maximum of 65mOhm at 30A drain current and 10V gate-source voltage.
The RFP30P06 can operate in a temperature range from -55°C to 175°C.
The RFP30P06 is available in a TO-220-3 package.
The RFP30P06 is designed for through-hole mounting.