| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The RFP30P05 from On Semiconductor is a P-Channel Power MOSFET manufactured using the MegaFET process. This device is rated for a 50V drain-to-source voltage and can handle a continuous drain current of 30A. Its low on-resistance is specified as 65mOhm at 30A and 10V gate-source voltage.
Designed for applications such as switching regulators, converters, and motor drivers, the RFP30P05 can be operated directly from integrated circuits. It features a gate-source voltage range of ±20V and a gate threshold voltage of 4V at 250µA. The operating temperature range is from -55°C to 175°C.
This MOSFET comes in a TO-220-3 package and is suitable for through-hole mounting. The input capacitance (Ciss) is 3200 pF at 25V, and the gate charge (Qg) is 170 nC at 20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the RFP30P05 is 50V.
The RFP30P05 has a continuous drain current rating of 30A.
The maximum on-resistance (Rds On) for the RFP30P05 is 65mOhm at 30A drain current and 10V gate-source voltage.
The RFP30P05 can operate in a temperature range of -55°C to 175°C.
The RFP30P05 is supplied in a TO-220-3 package.