| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The HAR RFP3055 is an N-Channel enhancement mode silicon gate power MOSFET. It is rated for a continuous drain current of 12A and a drain-to-source voltage of 60V. The on-resistance is a low 0.150 Ohms.
This power MOSFET is designed to withstand a specified level of energy in the breakdown avalanche mode. It is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors.
The RFP3055 is available in a TO-252AA surface mount package. It operates over a temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 60V.
The continuous drain current is 12A.
The typical on-resistance is 0.150 Ohms.
The operating temperature range is -55°C to 175°C.
The RFP3055 is available in a TO-252AA package.