| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFP22N10 from On Semiconductor is an N-Channel Power MOSFET manufactured using the MegaFET process. This device is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 22A at a case temperature.
The MOSFET has a low on-resistance (Rds On) of 80mOhm at 22A and 10V gate-source voltage, contributing to efficient power handling. The operating temperature range is -55°C to 175°C (TJ), and it has a maximum power dissipation of 100W (Tc).
This component is available in a TO-220-3 package, suitable for through-hole mounting. The gate-to-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA. It also features a gate charge of 150nC at 20V.
The RFP22N10 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 22A.
The maximum on-resistance (Rds On) is 80mOhm at 22A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
The RFP22N10 is available in a TO-220-3 package.
The RFP22N10 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.