Mfr Part #:

RFP12N10L

The ON Semiconductor RFP12N10L is an N-Channel MOSFET designed for power applications. It features a 100V drain-source voltage and a continuous drain current of 12A.

✓ Total Stock: 3,276 pcs

$ Price Range: $2.27

RFP12N10L Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	3,222 pcs On Request	3222 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	54 pcs On Request	54 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

RFP12N10L Description

Short technical summary and product information.

The RFP12N10L from ON Semiconductor is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at a case temperature.

This MOSFET utilizes Metal Oxide Semiconductor technology and has a low on-resistance (Rds On) of 200mOhm maximum at 12A and 5V gate-source voltage. The gate-source threshold voltage (Vgs(th)) is 2V maximum at 250µA, and the maximum gate-source voltage is ±10V.

Designed for through-hole mounting, the RFP12N10L comes in a TO-220-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W (Tc).

Key electrical characteristics include an input capacitance (Ciss) of 900pF at 25V and a drive voltage of 5V. This component is suitable for various power switching and control applications.

RFP12N10L Quick Information

Product Type: MOSFET

Series: RFP12N10L

Canonical Name: RFP12N10L N-Channel MOSFET

Subcategory: Single

RFP12N10L Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RFP12N10L Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFP12N10L Features

100V drain-source voltage rating.
12A continuous drain current capability.
Low 200mOhm Rds On at 12A, 5V.
TO-220-3 package for through-hole mounting.
Wide -55°C to 150°C operating temperature.

RFP12N10L Applications

Ideal for power switching circuits.
Used in DC-DC converters.
Suitable for motor control applications.
Applicable in power supply designs.

RFP12N10L FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the RFP12N10L MOSFET?

The drain-source voltage (Vdss) is 100V.

What is the maximum continuous drain current for the RFP12N10L?

The maximum continuous drain current is 12A.

What is the Rds On (Max) for the RFP12N10L at specified conditions?

The Rds On (Max) is 200mOhm at 12A drain current and 5V gate-source voltage.

What is the operating temperature range of the RFP12N10L?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the RFP12N10L MOSFET supplied in?

The RFP12N10L is supplied in a TO-220-3 package.

How is the RFP12N10L MOSFET mounted?

The RFP12N10L is designed for through-hole mounting.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	12A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5V
FET Type	N-Channel
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
Medical Grade	No
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	60W (Tc)
Rds On (Max) @ Id, Vgs	200mOhm @ 12A, 5V
Supplier Device Package	TO-220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2V @ 250µA