| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
933 pcs
|
933 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFP12N06RLE is an N-Channel Power MOSFET manufactured by Harris Semiconductor. It features a drain-to-source voltage (Vdss) of 60V and is suitable for high-speed switching and power management applications. Its design allows for efficient conduction and switching performance in various electronic circuits.
This MOSFET is typically used in power supplies, motor control, and other electronic systems requiring reliable switching components. It is packaged for surface mounting, facilitating integration into compact circuit designs. The device's electrical characteristics make it suitable for applications demanding high efficiency and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the RFP12N06RLE is 60V.