| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,444 pcs
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2444 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor RFN10NS3S is a super fast recovery diode suitable for general rectification applications. It is constructed using silicon epitaxial planar technology.
Key electrical characteristics include a maximum reverse voltage of 350V and an average rectified forward current of 10A at 88°C. The diode exhibits a typical forward voltage of 1.25V and a maximum of 1.5V at 25°C. Its reverse recovery time is rated at a maximum of 30ns under specific test conditions.
This device offers low switching loss and high current overload capacity, making it a robust choice for demanding applications. The thermal resistance from junction to case is 4.0°C/W.
The RFN10NS3S is housed in a TO-263S package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRM) for the RFN10NS3S diode is 350V.
The average rectified forward current (Io) for the RFN10NS3S diode is 10A at 88°C.
The typical forward voltage (VF) for the RFN10NS3S diode is 1.25V at 25°C.
The maximum reverse recovery time (trr) for the RFN10NS3S diode is 30ns.
The thermal resistance (junction to case) for the RFN10NS3S diode is 4.0°C/W.
The RFN10NS3S diode is supplied in a TO-263S package for surface mounting.
