| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFM10P15 from NJS is a P-channel enhancement-mode power field-effect transistor designed for various power applications. This component features a maximum breakdown voltage of 150V and can handle a maximum power dissipation of 100W, making it suitable for demanding tasks.
Key electrical characteristics include a minimum drain-source resistance of 500mΩ. The transistor operates at a maximum temperature of 150°C, ensuring reliability in elevated thermal environments. Its design as a power field-effect transistor suggests applications in switching and amplification circuits where robust performance is required.
While specific package and mounting details are not provided, power field-effect transistors are typically designed for efficient heat dissipation and integration into power circuitry. The RFM10P15 is categorized under RF Power Controller ICs, indicating its potential use in radio frequency power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage for the RFM10P15 is 150V.
The RFM10P15 has a maximum power dissipation of 100W.
The minimum drain-source resistance is 500mΩ.
The maximum operating temperature is 150°C.
Yes, the RFM10P15 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the RFM10P15 is REACH Unaffected.