| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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182 pcs
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182 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Harris Semiconductor RFM10P12 is a P-Channel Power MOSFET suitable for various power control applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C, with a maximum power dissipation of 100W (Tc).
This MOSFET utilizes Metal Oxide Semiconductor technology and has a gate threshold voltage (Vgs(th)) of 4V at 1mA and a maximum gate-source voltage (Vgs) of ±20V. The on-resistance (Rds(on)) is 300mOhm at 6A and 10V. It operates within a temperature range of -55°C to 150°C (TJ).
The RFM10P12 is packaged in a TO-3 (TO-204AA) case and is designed for through-hole mounting. Its input capacitance (Ciss) is 1500 pF at 25V. The drive voltage is 10V.
This component is part of the RF Power Controller ICs category, indicating its use in applications requiring precise control of RF power.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the RFM10P12 is 100V.
The continuous drain current (Id) at 25°C for the RFM10P12 is 12A.
The maximum power dissipation of the RFM10P12 is 100W (Tc).
The operating temperature range for the RFM10P12 is -55°C to 150°C (TJ).
The RFM10P12 is available in a TO-3 (TO-204AA) package.
The RFM10P12 is designed for through-hole mounting.