| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba RFM01U7P is an N-Channel RF MOSFET Transistor belonging to the RFM01 series. This component is designed for radio frequency power applications, offering a drain-source breakdown voltage of 20V and a continuous drain current of 0.1A.
Key electrical characteristics include an operating frequency of 520MHz, a gain of 10.8 dB, and an output power of 1.2W. The power dissipation is rated at 3W, with a gate-source voltage of 10V and a gate-source threshold voltage of 1.1V.
This RF MOSFET is housed in a PW-M in I-3 package and is designed for surface-mount (SMD/SMT) applications. It is supplied on a reel, with a factory pack quantity of 1000 units. The technology used is Silicon (Si), and it is configured as a single transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency is 520 MHz.
The gain is 10.8 dB.
The output power is 1.2 W.
The drain-source breakdown voltage is 20 V.
The continuous drain current is 0.1 A.
The transistor polarity is N-Channel.
The RFM01U7P is available in a PW-M in I-3 SMD package.