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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFK25P10 from RCA is a P-Channel enhancement mode silicon gate power MOSFET. It is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers that require high speed and low gate drive power. These transistors can be operated directly from integrated circuits.
Key electrical characteristics include a maximum drain-to-source voltage of -100V and a continuous drain current of -25A at 25°C. The typical on-resistance (r DS(ON)) is 0.15 Ohms. The device can handle pulsed drain currents up to -60A and has a gate-to-source voltage rating of ±20V.
With a maximum power dissipation of 150W at 25°C, the RFK25P10 is suitable for demanding power applications. It operates within a temperature range of -55°C to 150°C. The component is available in the TO-218AC package, which is a through-hole mounting type.
This MOSFET is sensitive to electrostatic discharge, and users should follow proper ESD handling procedures. The datasheet also provides guidelines for soldering surface mount components to PC boards.
-100V
-25A
0.15 Ohms
-55 to 150°C
TO-218AC