| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFG70N06 is an N-Channel Power MOSFET manufactured by ON Semiconductor using the MegaFET process. This device is designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. It offers a drain-to-source voltage of 60V and a continuous drain current of 70A.
The MOSFET has a low on-resistance of 14mOhm at 70A and 10V gate-source voltage. Key electrical parameters include an input capacitance of 2250pF at 25V and a gate charge of 156nC at 20V. The operating temperature range is from -55°C to 175°C, with a maximum power dissipation of 150W.
This component is packaged in a TO-247-3 through-hole package. It is suitable for direct operation from integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 70A.
The on-resistance is 14mOhm at 70A and 10V.
The operating temperature range is -55°C to 175°C.
The RFG70N06 is supplied in a TO-247-3 package.