| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFG60P05E is a P-Channel Power MOSFET manufactured by ON Semiconductor using the MegaFET process. This process optimizes silicon utilization for outstanding performance, making it suitable for applications such as switching regulators, converters, motor drivers, and relay drivers. It can be operated directly from integrated circuits.
Key electrical specifications include a 50V drain-to-source breakdown voltage, a continuous drain current of 60A (Tc), and a maximum power dissipation of 215W (Tc). The Rds(On) is rated at a low 30mOhm at 60A and 10V gate-source voltage. The device features a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V at 250µA.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TO-247-3 package and features a through-hole mounting type. The datasheet also provides information on ESD rating (2kV) and related literature for soldering surface mount components.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50 V
60A
30mOhm
-55 to 175 °C
TO-247-3
Through Hole