BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFD4N06L from HAR is an N-Channel enhancement mode silicon gate power MOSFET specifically engineered for applications requiring logic level (5 volt) driving sources. This design facilitates true on-off power control directly from logic circuit supply voltages, making it suitable for programmable controllers, automotive switching, and solenoid drivers.
Key electrical specifications include a Drain to Source Breakdown Voltage of 60V, a Continuous Drain Current of 4A, and a maximum On-Resistance (RDS(on)) of 600mΩ. The device is optimized for a 5 Volt Gate Drive and can be driven directly from Q-MOS, N-MOS, or TTL circuits.
With a rated junction temperature of 175°C, the RFD4N06L can handle demanding thermal conditions. It is available in a TO-252AA package and is designed for surface mounting.
This MOSFET is suitable for various switching applications where efficient control from low-voltage logic is required. Its robust design ensures reliable performance in automotive and industrial control systems.
| Qty | Low | High |
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Breakdown Voltage is 60V.
The Continuous Drain Current is 4A.
The maximum On-Resistance is 600mΩ.
The maximum operating temperature is 175°C.
The RFD4N06L is available in a TO-252AA package.
Yes, the RFD4N06L is specifically designed for use with logic level (5 volt) driving sources.