RFD3055SM9A The On Semiconductor RFD3055SM9A is an N-Channel MOSFET with a 60V drain-source voltage and 12A continuous current rating. It features a low Rds On of 150mOhm at 12A, 10V.
Mfr Part #:

RFD3055SM9A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor RFD3055SM9A is an N-Channel MOSFET with a 60V drain-source voltage and 12A continuous current rating. It features a low Rds On of 150mOhm at 12A, 10V.
✓ Total Stock: 71 pcs
$ Price Range: $2.27

RFD3055SM9A Available from 1 distributor

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RFD3055SM9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFD3055SM9A Description

Short technical summary and product information.

The RFD3055SM9A is an N-Channel enhancement mode silicon gate power MOSFET from On Semiconductor. It is designed for applications requiring high speed and low gate drive power, such as switching regulators, switching converters, motor drivers, and relay drivers.

 

Key electrical specifications include a drain-source voltage (Vdss) of 60V, a continuous drain current (Tc) of 12A, and a maximum on-resistance (Rds On) of 150mOhm at 12A and 10V gate-source voltage. The gate-source voltage (Vgs) can range up to ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. Input capacitance (Ciss) is 300pF at 25V, and gate charge (Qg) is a maximum of 23nC at 20V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-252AA surface mount package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63. The maximum power dissipation is rated at 53W (Tc).

 

This device is suitable for direct operation from integrated circuits and is designed to withstand a specified level of energy in the breakdown avalanche mode.

RFD3055SM9A Quick Information

Product Type: MOSFET
Canonical Name: RFD3055SM9A N-Channel MOSFET
Subcategory: Single

RFD3055SM9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD3055SM9A Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD3055SM9A Features

  • N-Channel MOSFET technology.
  • 60V drain-source voltage rating.
  • 12A continuous drain current.
  • 150mOhm maximum Rds On.
  • TO-252AA surface mount package.

RFD3055SM9A Applications

  • Switching regulators and converters.
  • Motor driver applications.
  • High power bipolar transistor drivers.
  • Direct operation from ICs.

RFD3055SM9A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RFD3055SM9A?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The continuous drain current is 12A (Tc).

What is the Rds On specification for this MOSFET?

The Rds On is a maximum of 150mOhm at 12A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the RFD3055SM9A in?

It is in a TO-252AA package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.

RFD3055SM9A Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
RFD3055SM
RFD3055SM
On Semiconductor
MOSFET N-CH 60V 12A TO252AA
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