| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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208 pcs
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208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The On Semiconductor RFD3055RLE is an N-Channel Silicon MOSFET designed for various electronic applications. This component features a drain-source breakdown voltage of 60V and can handle a continuous drain current of 12A.
Packaged in a TO-251 case, this MOSFET is suitable for applications requiring efficient power switching and control. Its N-Channel configuration and silicon construction make it a versatile choice for circuit designers.
Further specifications such as gate-source voltage, RDS(on), and maximum power dissipation would typically be found in the manufacturer's datasheet, providing detailed operational parameters for integration into specific designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RFD3055RLE is an N-Channel Silicon MOSFET.
The drain-source breakdown voltage is 60V.
The continuous drain current is 12A.
The RFD3055RLE is in a TO-251 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.