| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,365 pcs
|
1365 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,116 pcs
|
1116 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Mode | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFD3055LESM9A is a single N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (ID) of 11A. The device exhibits a low on-resistance (Rds On) of 107mOhm at 8A and 5V gate-source voltage, indicating efficient power handling.
Designed for surface mounting, this MOSFET comes in a TO-252AA package, also known as DPak. Its operating temperature range is from -55°C to 175°C (TJ), with a maximum power dissipation of 38W (Tc). The technology used is Metal Oxide Semiconductor, operating in enhancement mode.
Key electrical parameters include a gate charge (Qg) of 11.3 nC at 10V and an input capacitance (Ciss) of 350 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and the maximum gate-source voltage (Vgs) is ±16V. The RFD3055LESM9A is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the RFD3055LESM9A is 60V.
The RFD3055LESM9A MOSFET has a maximum continuous drain current (ID) of 11A.
The maximum on-resistance (Rds On) for the RFD3055LESM9A is 107mOhm when measured at 8A drain current and 5V gate-source voltage.
The RFD3055LESM9A operates within a temperature range of -55°C to 175°C (TJ).
The RFD3055LESM9A MOSFET is supplied in a TO-252AA package, also known as DPak.
Yes, the RFD3055LESM9A is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the RFD3055LESM9A is 1 Unlimited.