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RFD3055LESM The RFD3055LESM is an N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and 11A continuous current, housed in a surface mount TO-252AA package.
Mfr Part #:

RFD3055LESM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The RFD3055LESM is an N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and 11A continuous current, housed in a surface mount TO-252AA package.
✓ Total Stock: 4,300 pcs
$ Price Range: $2.27

RFD3055LESM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,800 pcs
On Request
1800 pcs On Request 1 On Request On Request 06+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RFD3055LESM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RFD3055LESM Description

Short technical summary and product information.

The RFD3055LESM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for applications such as switching regulators, converters, and motor drivers.

 

Key electrical specifications include a drain-source voltage (Vdss) of 60V, a continuous drain current of 11A, and a maximum on-resistance (Rds(on)) of 107mOhm at 8A and 5V Vgs. The gate charge (Qg) is 11.3nC at 10V Vgs, and the gate threshold voltage (Vgs(th)) is 3V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 38W. It is available in a TO-252AA package, suitable for surface mounting.

 

The device utilizes advanced manufacturing technology for optimal silicon utilization and outstanding performance. It can be operated directly from integrated circuits.

RFD3055LESM Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: RFD3055LESM N-Channel Logic Level Power MOSFET
Subcategory: N-Channel

RFD3055LESM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD3055LESM Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD3055LESM Features

  • 60V drain-source voltage rating.
  • 11A continuous drain current.
  • 107mOhm maximum on-resistance.
  • Surface mount TO-252AA package.
  • Logic-level gate drive support.

RFD3055LESM Applications

  • Switching regulators and converters.
  • Motor and relay driver circuits.
  • Power management applications.
  • Integrated circuit driven switching.

RFD3055LESM FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RFD3055LESM?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 11A at 25°C case temperature.

What is the on-resistance of the RFD3055LESM?

The maximum on-resistance is 107mOhm when the drain current is 8A and the gate-source voltage is 5V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the RFD3055LESM available in?

It is available in a TO-252AA package, which is a surface mount type.

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