RFD16N06LESM9A The ON Semiconductor RFD16N06LESM9A is an N-Channel MOSFET designed for various applications. It features a 60V drain-source voltage and 16A continuous drain current.
Mfr Part #:

RFD16N06LESM9A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor RFD16N06LESM9A is an N-Channel MOSFET designed for various applications. It features a 60V drain-source voltage and 16A continuous drain current.
✓ Total Stock: 1,696 pcs
$ Price Range: $2.27

RFD16N06LESM9A Available from 1 distributor

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✓ Non-Authorised
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RFD16N06LESM9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFD16N06LESM9A Description

Short technical summary and product information.

The RFD16N06LESM9A from ON Semiconductor is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor (MOSFET) technology family. This component is designed for efficient power switching and amplification tasks.

 

Key electrical characteristics include a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 16A at a case temperature (Tc). The on-resistance (Rds On) is specified at a maximum of 47mOhm when tested at 16A drain current and 5V gate-source voltage. The gate charge (Qg) is a maximum of 62nC at 10V, and the input capacitance (Ciss) is 1350pF at 25V.

 

The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 90W (Tc). It requires a gate drive voltage of 5V for optimal performance.

 

Packaged in a TO-252AA (DPak) surface mount configuration, the RFD16N06LESM9A is suitable for applications requiring compact and efficient power management. Its robust design and specifications make it a reliable choice for various electronic circuits.

RFD16N06LESM9A Quick Information

Product Type: MOSFET
Series: RFD16N06LESM9A
Canonical Name: RFD16N06LESM9A N-Channel MOSFET
Subcategory: N-Channel

RFD16N06LESM9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD16N06LESM9A Estimated Pricing

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1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD16N06LESM9A Features

  • 60V drain-source voltage rating.
  • 16A continuous drain current.
  • Low 47mOhm on-resistance.
  • Surface mount TO-252AA package.
  • Wide -55°C to 175°C operating temperature.

RFD16N06LESM9A Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in motor control applications.
  • Applicable in power management systems.

RFD16N06LESM9A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RFD16N06LESM9A?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 16A.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 47mOhm at 16A drain current and 5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

How is the RFD16N06LESM9A packaged?

It is supplied in a TO-252AA package for surface mounting.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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