RFD16N05 The RFD16N05 is an N-Channel MOSFET from Harris Semiconductor with a 50V drain-source voltage and 16A continuous current. It is housed in a TO-251-3 IPAK package.
Mfr Part #:

RFD16N05

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
The RFD16N05 is an N-Channel MOSFET from Harris Semiconductor with a 50V drain-source voltage and 16A continuous current. It is housed in a TO-251-3 IPAK package.
✓ Total Stock: 3,200 pcs
$ Price Range: $2.27

RFD16N05 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,200 pcs
3200 pcs On Request 1 On Request On Request On Request On Request On Request

RFD16N05 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RFD16N05 Description

Short technical summary and product information.

The RFD16N05 is an N-Channel MOSFET manufactured by Harris Semiconductor, designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 50V and can handle a continuous drain current of 16A at a case temperature of Tc.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 47mOhm at 16A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The MOSFET has a maximum gate-source voltage (Vgs) of ±20V and requires a drive voltage of 10V for optimal Rds On performance. Input capacitance (Ciss) is 900pF at 25V, and gate charge (Qg) is 80nC at 20V.

 

This device operates within a temperature range of -55°C to 175°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for through-hole mounting. The package is a TO-251-3 Short Leads, IPak, TO-251AA, also referred to as I-PAK by the supplier.

RFD16N05 Quick Information

Product Type: MOSFET
Canonical Name: RFD16N05 N-Channel MOSFET
Subcategory: N-Channel

RFD16N05 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD16N05 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD16N05 Features

  • 50V drain-source voltage rating.
  • 16A continuous drain current capability.
  • Low 47mOhm maximum on-resistance.
  • Operates from -55°C to 175°C.
  • TO-251-3 IPAK through-hole package.

RFD16N05 Applications

  • Suitable for power switching circuits.
  • Used in general purpose electronics.
  • Ideal for applications requiring 50V operation.
  • Component for power management modules.

RFD16N05 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RFD16N05?

The maximum drain-source voltage (Vdss) for the RFD16N05 is 50V.

What is the continuous drain current of the RFD16N05?

The RFD16N05 has a continuous drain current of 16A at the case.

What is the maximum on-resistance of the RFD16N05?

The maximum on-resistance (Rds On) for the RFD16N05 is 47mOhm when measured at 16A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range for the RFD16N05 is -55°C to 175°C.

What package type is the RFD16N05 supplied in?

The RFD16N05 is supplied in a TO-251-3 Short Leads, IPak, TO-251AA package.

How is the RFD16N05 mounted?

The RFD16N05 is designed for through-hole mounting.

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