| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,310 pcs
|
1310 pcs | On Request | 1 | On Request | On Request | 98 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Mounting Type | |
| Supplier Device Package | |
| Technology |
The RFD15N06LESM from Harris Semiconductor is an N-Channel Power MOSFET. This component is designed for electronic circuits requiring efficient switching and power handling. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 15A at 25°C.
The MOSFET utilizes Metal Oxide Semiconductor technology. It is housed in a TO-252-3 (DPAK) package, making it suitable for surface mount applications. The device is specified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
Key electrical characteristics include its N-Channel FET type and the specified voltage and current ratings. The surface mountable package facilitates integration into compact PCB designs. Further specifications such as Rds On, Vgs(th), and operating temperature are not detailed in the provided information.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 15A at 25°C.
The RFD15N06LESM is an N-Channel FET.
The mounting type is Surface Mount.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63.