| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
435 pcs
|
435 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RFD14N05SM9A is an N-Channel power MOSFET manufactured using the MegaFET process by ON Semiconductor. This device is rated for 50V drain-to-source voltage and can handle a continuous drain current of 14A at 25°C case temperature. It offers a low on-resistance of 100mOhm at 14A and 10V gate-source voltage.
Designed for applications such as switching regulators, converters, and motor drivers, the RFD14N05SM9A operates over a wide temperature range of -55°C to 175°C. The MOSFET is housed in a TO-252 (D-Pak) surface-mount package, suitable for space-constrained designs.
Key electrical characteristics include a gate threshold voltage of up to 4V at 250µA and a maximum gate-to-source voltage of ±20V. The device also has an input capacitance of 570pF and a gate charge of 40nC under specified conditions. Its maximum power dissipation is 48W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 50V.
The maximum gate threshold voltage is 4V.
The maximum RDS(ON) is 0.1 Ohm.
The continuous drain current is 14A at 25°C.
It comes in a TO-252-3, DPak package.
-55°C to 175°C.
Yes, it is RoHS3 compliant.