| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,727 pcs
|
328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor RFD14N05LSM9A is a single N-Channel MOSFET from the Metal Oxide technology family. It is rated for a maximum drain-source voltage (Vdss) of 50V and can handle a continuous drain current of 14A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 100mOhm at 14A and 5V gate-source voltage, and a gate charge (Qg) of 40nC at 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA drain current. The device operates within a temperature range of -55°C to 175°C (TJ).
This MOSFET is packaged in a TO-252AA (DPak) surface-mount package, suitable for various electronic designs. The maximum power dissipation is 48W at the case temperature. The maximum gate-source voltage is ±10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 50V.
The continuous drain current is 14A.
The maximum Rds On is 100mOhm at 14A drain current and 5V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-252AA package for surface mounting.